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Publications in Microelectronics PDF Print E-mail
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Sunday, 03 January 2010 15:20
Scientific Publications in Journals and Conference papers under full review
  1. S. Papatzika, N.A. Hastas, C.T. Angelis, C.A. Dimitriadis, G. Kamarinos, and J.I. Lee, “Investigation of noise sources in platinum silicide Schottky barrier diodes”, Applied Physics Letters, 80, No8, pp. 1-3 (2002).
  2. N. Konofaos, C.T. Angelis, E.K. Evangelou, N.A. Xastas, Y. Panagiotatos, C.A. Dimitriadis and S. Logothetidis, “The effects of interface and bulk defects on the electrical performance of amorphous carbon/silicon heterojunctions”, DRIP IX, Rimini, Italy – September 24-28, 2001.
  3. N. Konofaos, C.T. Angelis, E.K. Evangelou, C.A. Dimitriadis and S. Logothetidis, “Charge Carrier response time in sputtered a-C/n-Si heterojunctions”, Applied Physics Letters 79, No15, pp. 2381-2383 (2001).
  4. N.A. Xastas, C.A. Dimitriadis, S. Logothetidis, C.T. Angelis, N. Konofaos and E. K. Evangelou, “Temperature dependence of the barrier at the tetrahedral amorphous carbon – silicon interface”, Semiconductor Science and Technology 16, p.474-477 (2001).
  5. N. Konofaos, C.T. Angelis, E.K. Evangelou, Y. Panagiotatos, C.A. Dimitriadis and S. Logothetidis, “Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature”, Applied Physics Letters 78, No12, pp1682-1684 (2001).
  6. F.V. Farmakis, J. Brini, G. Kamarinos, C.T. Angelis, C.A. Dimitriadis, and M. Miyasaka, “On-Current Modeling of Large-Grain Polycrystalline Silicon Thin-Film Transistors”, IEEE Transactions on Electron Devices, Vol 48, Iss 4, pp 701-706 (2001).
  7. C.T.Angelis, C.A.Dimitriadis, J.Brini, G.Kamarinos, V.K.Gueorguiev, and Tz.E.Ivanov, “An Application of Low Frequency Noise Spectroscopy in Polycrystalline Silicon Thin Film Transistors”, Fourth General Conference of the Balkan Physical Union, Veliko Turnovo 22-27 August 2000.
  8. C.T. Angelis, C. A. Dimitriadis, F.V. Farmakis, J. Brini G. Kamarinos, and M. Miyasaka, “Threshold voltage of excimer laser annealed polycrystalline silicon thin film transistors”, Applied Physics Letters Vol. 76, No.17, p.2442 (2000).
  9. F.V. Farmakis, J. Brini G. Kamarinos, C.T. Angelis, C. A. Dimitriadis, M. Miyasaka, and T. Ouisse, “Grain and grain boundary control on transfer characteristics of large grain polycrystalline silicon thin-film transistors”, Solid-State Electronics, 44, p.913-916 (2000).
  10. C.T. Angelis, C. A. Dimitriadis, F. V. Farmakis, J. Brini, G. Kamarinos, V. K. Gueorguiev and Tz. E. Ivanov, “Empirical relationship between low frequency drain current noise and grain boundary potential barrier height in high-temperature polycrystalline silicon thin film transistors”, Applied Physics Letters 76, 118 (2000).
  11. C.T. Angelis, C. A. Dimitriadis, F.V. Farmakis, J. Brini, G. Kamarinos, M. Miyasaka, and I. Stoemenos, “Transconductance of large grain excimer laser annealed polycrystalline silicon thin-film transistors”, Solid-State Electronics, 44, p.1081-1087 (2000).
  12. F.V. Farmakis, J. Brini, G. Kamarinos, C.T. Angelis, C.A. Dimitriadis and M. Miyasaka, “New findings on hot-carrier stress in large grain excimer annealed n-channel polysilicon TFTs”, ESSDERC’99 Conf., Leuven, Belgium, 1999.
  13. F.V. Farmakis, J. Brini, G. Kamarinos, C.T. Angelis, C.A. Dimitriadis and M. Miyasaka, “Evolution of low frequency noise during hot carrier stress in excimer laser annealed n-channel polysilicon thin film transistors”, Proc. of 15th Intern. Conf. on Noise in Physical Systems and 1/f Fluctuations, p. 457, Hong Kong, 22-27 Aug. 1999.
  14. C.T. Angelis, C. A. Dimitriadis, F.V. Farmakis, J. Brini G. Kamarinos, and M. Miyasaka, “Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistors”, Journal of Applied Physics 86, 7083 (1999).
  15. C.T. Angelis, C.A. Dimitriadis, M. Miyasaka, F.V. Farmakis, G. Kamarinos, J. Brini and J. Stoemenos, “Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin film transistors”, Journal of Applied Physics 86, 4600 (1999).
  16. C.T. Angelis, C. A. Dimitriadis, F. V. Farmakis, G. Kamarinos, J. Brini, and M. Miyasaka, “Electrical and noise properties of thin-film transistors on very thin excimer laser annealed polycrystalline silicon films”, Applied Physics Letters 74, 3684 (1999).
  17. C.T. Angelis, C.A. Dimitriadis, J. Brini, G. Kamarinos, V.K. Gueorguiev, and Tz.E. Ivanov, “Low frequency noise spectroscopy of polycrystalline silicon thin film transistors”, IEEE Transactions on Electron Devices 46, 968 (1999).
  18. C.T. Angelis, C.A. Dimitriadis, I. Samaras, J. Brini and G. Kamarinos, “Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements”, Journal of Applied Physics 82, 4095 (1997).
  19. F. Gaiseanu, C.A. Dimitriadis, J. Stoemenos, C. Postolache and C. Angelis, “Structural modifications of the thick polysilicon layers on silicon during phosphorus diffusion: Contributing mechanisms”, CAS’96, Proceedings, International Semiconductor Conference, Oct. 9-12, 1996, Sinai, Romania, p. 61 (Best Paper Award).
  20. Ι. Kandarakis, D. Cavouras, G. Panagiotakis, T. Agelis, C. Nomikos, and G. Giakoumakis, “X-ray induced luminescence and spatial resolution of La2O2S:Tb phosphor screens”, Phys. Med. Biol. 41 p.297-307, (1996).
Last Updated on Sunday, 03 January 2010 15:47